VS-1N5819 Vishay, VS-1N5819 Datasheet - Page 3

• Manufacturer Part Number: VS-1N5819
• Description: Diode
• Manufacturer: Vishay

Specifications of VS-1N5819

• Peak Reflow Compatible (260 C): Yes
• Leakage Current: 1mA
• Current Rating: 1A
• Leaded Process Compatible: Yes
• Forward Voltage: 550mV
• Mounting Type: Through Hole
• Breakdown Voltage: 40V
• Forward Current If: 1A
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.9 V at 3.1 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Package / Case: DO-204AL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 88525
Revision: 20-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
0.001
1000
0.01
100
0.01
100
1.0
0.1
1.0
10
0.1
50
10
10
0
0.1
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
T
0.2
J
= 125 °C
Instantaneous Forward Voltage (V)
T
20
J
= 125 °C
0.4
T
Reverse Voltage (V)
0.6
J
40
1
= 75 °C
T
0.8
J
= 25 °C
60
Pulse Width = 300 µs
1 % Duty Cycle
1.0
T
J
= 25 °C
1.2
10
80
T
f = 1.0 MHz
V
J
sig
= 25 °C
1.4
= 50 mVp-p
1N5817
100
1.6
100
100
400
100
10
0.1
10
1
0.1
0.01
Figure 7. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
1N5817, 1N5818, 1N5819
0.1
Reverse Voltage (V)
t - Pulse Duration (s)
1
1
10
1N5818 & 1N5819
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3