TSHG6410 Vishay, TSHG6410 Datasheet - Page 3

• Manufacturer Part Number: TSHG6410
• Description: IR EMITTER DH 850NM 5MM 22DEG-e2
• Manufacturer: Vishay

Specifications of TSHG6410

• Radiant Intensity: 90 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 180 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 850 nm
• Package / Case: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BASIC CHARACTERISTICS
T
Document Number: 81870
Rev. 1.2, 08-Jul-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
21308
18873
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
16031
1000
1000
1000
100
100
100
10
10
1
1
0.01
0
1
V
I
F
F
0.1
1
- Forward Current (mA)
t
- Forward Voltage (V)
P
- Pulse Duration (ms)
10
t
P
/T = 0.01
1
2
For technical questions, contact:
t
t
P
P
/T = 0.001
0.02
100
= 100 µs
t
P
0.05
High Speed Infrared Emitting Diode,
= 0.1 ms
T
0.2
0.5
10
amb
3
850 nm, GaAlAs Double Hetero
< 50 °C
0.1
1000
100
4
[e-mail]
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
16971
16972
21355
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
100
Fig. 6 - Radiant Power vs. Forward Current
0.1
1.0
0.5
1.0
0.9
0.8
0.7
10
1
0
1
0.6
800
I
0.4
F
λ- Wavelength (nm)
- Forward Current (mA)
Vishay Semiconductors
1 0
0.2
850
0°
0
100
10°
900
TSHG6410
20°
1000
www.vishay.com
30°
40°
50°
60°
70°
80°
3