TSHG6210 Vishay, TSHG6210 Datasheet - Page 3

IR EMITTER DH 850NM 5MM 10DEG-e2

TSHG6210

Manufacturer Part Number
TSHG6210
Description
IR EMITTER DH 850NM 5MM 10DEG-e2
Manufacturer
Vishay
Datasheet

Specifications of TSHG6210

Radiant Intensity
230 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
180 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Operating Voltage
5 V
Wavelength
850 nm
Package / Case
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TSHG6210
Quantity:
70 000
BASIC CHARACTERISTICS
T
Document Number: 81869
Rev. 1.2, 25-Jun-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
21307
18873
Fig. 4 - Forward Current vs. Forward Voltage
10 000
Fig. 5 - Radiant Intensity vs. Forward Current
16031
1000
1000
1000
100
100
100
10
10
1
1
0.01
0
1
V
I
F
F
0.1
- Forward Current (mA)
1
- Forward Voltage (V)
t
P
- Pulse Duration (ms)
10
t
P
/T = 0.01
2
1
For technical questions, contact:
t
t
P
P
/T = 0.001
100
0.02
= 100 µs
t
t
P
P
/T = 0.001
High Speed Infrared Emitting Diode,
= 0.1 ms
0.05
T
0.2
0.5
10
3
amb
850 nm, GaAlAs Double Hetero
< 50 °C
0.1
1000
100
4
emittertechsupport@vishay.com
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
16971
16972
21111
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
Fig. 6 - Radiant Power vs. Forward Current
100
1.0
0.9
0.8
0.7
1.0
0.5
0.1
10
1
0
1
0.6
800
0.4
I
F
λ- Wavelength (nm)
- Forward Current (mA)
Vishay Semiconductors
1 0
0.2
850
0
100
10°
900
TSHG6210
20°
1000
www.vishay.com
30°
40°
50°
60°
70°
80°
3

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