TSHG5410 Vishay, TSHG5410 Datasheet - Page 4

• Manufacturer Part Number: TSHG5410
• Description: IR EMITTER DH 850NM 5MM 22DEG-e2
• Manufacturer: Vishay

Specifications of TSHG5410

• Radiant Intensity: 90 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 180 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 850 nm
• Package / Case: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TSHG5410
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
4
Drawing-No.: 6.544-5258.11-4
Issue: 2; 19.05.09
21797
0.5
+ 0.15
- 0.05
A
For technical questions, contact:
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
2.54 nom.
1.1 ± 0.25
C
[e-mail]
0.5
Ø 5 ± 0.15
R2.49 (sphere)
Area not plane
+ 0.15
- 0.05
Document Number: 81811
technical drawings
according to DIN
specifications
Rev. 1.2, 08-Jul-09