TSHF6410 Vishay, TSHF6410 Datasheet - Page 3

• Manufacturer Part Number: TSHF6410
• Description: IR EMITTER DH 890NM 5MM 22DEG-e2
• Manufacturer: Vishay

Specifications of TSHF6410

• Radiant Intensity: 70 mW/sr
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 160 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Operating Voltage: 5 V
• Wavelength: 890 nm
• Package / Case: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BASIC CHARACTERISTICS
T
Document Number: 81832
Rev. 1.2, 25-Jun-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
18220
18873
16031
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.01
0
1
I
V
F
F
- Forward Current (mA)
0.1
1
- Forward Voltage (V)
t
P
10
- Pulse Duration (ms)
t
P
/T = 0.01
2
1
For technical questions, contact:
t
100
t
P
P
/T = 0.001
= 100 µs
0.02
High Speed Infrared Emitting Diode,
0.05
3
0.2
T
0.5
10
amb
890 nm, GaAlAs Double Hetero
1000
< 50 °C
0.1
4
100
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Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
16971
20082
94 8883
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
Fig. 6 - Radiant Power vs. Forward Current
1.25
0.75
0.25
100
0.1
1.0
0.5
1.0
0.9
0.8
0.7
10
1
0
800
1
0.6
0.4
I
F
- Forward Current (mA)
Vishay Semiconductors
1 0
λ - Wavelength (nm)
0.2
900
0°
0
100
10°
TSHF6410
20°
1000
www.vishay.com
1000
30°
40°
50°
60°
70°
80°
3