SUD50N02-06P-E3 Vishay, SUD50N02-06P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N02-06P-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,26A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD50N02-06P-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 6800 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Fall Time: 9 ns
• Rise Time: 10 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N02-06P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
40
32
24
16
8
0
0.01
0.01
0
0.1
0.1
2
1
2
1
10
10
−4
−4
25
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Drain Current vs.
Single Pulse
T
A
Ambiemt Temperature
50
0.05
− Ambient Temperature (_C)
0.02
10
10
75
−3
−3
100
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
−2
150
10
−2
175
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
−1
10
−1
1000
0.01
100
1
0.1
10
1
0.1
by r
Limited
1
DS(on)
V
DS
10
Single Pulse
Safe Operating Area
T
− Drain-to-Source Voltage (V)
A
1
= 25_C
10
100
S-32425—Rev. C, 24-Nov-03
Document Number: 71931
10
10, 100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
1000
100
100