ST733C08LFM0 Vishay, ST733C08LFM0 Datasheet - Page 3

• Manufacturer Part Number: ST733C08LFM0
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),940A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST733C08LFM0

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 75 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 20950 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94378
Revision: 11-Aug-08
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
maximum
minimum
For technical questions, contact: [e-mail]
SYMBOL
dI/dt
(Hockey PUK Version), 940 A
t
t
d
q
Inverter Grade Thyristors
SYMBOL
SYMBOL
SYMBOL
T
Gate pulse: 20 V 20 Ω, 10 µs 0.5 µs rise time
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
R
TM
P
+ V
R
- V
dV/dt
I
J
J
J
R
I
P
V
RRM
V
T
thC-hs
DRM
G(AV)
I
I
I
thJ-hs
GM
T
GT
GD
= T
= 25 °C, V
= T
GM
GD
Stg
= 50 V, t
GT
= 550 A, commutating dI/dt = 40 A/µs
GM
J
GM
,
J
J
maximum, V
maximum,
p
DM
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
= 500 µs, dV/dt: see table in device code
T
higher value available on request
T
J
J
J
J
J
J
= T
= T
= 25 °C, V
= T
= T
= T
= Rated V
TEST CONDITIONS
J
J
J
J
J
DRM
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
= Rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
A
DRM
= 12 V, R
, I
TM
p
Vishay High Power Products
≤ 5 ms
DRM
= 50 A DC, t
a
, I
= 6 Ω
DRM
DRM
TM
ST733CLPbF Series
/V
= 2 x dI/dt
applied
RRM
p
DRM
= 1 µs
applied
,
- 40 to 125
- 40 to 150
TO-200AC (B-PUK)
VALUES
VALUES
VALUES
VALUES
14 700
(1500)
0.073
0.031
0.011
0.005
1000
0.25
500
200
255
1.5
10
20
75
60
10
10
20
20
5
3
www.vishay.com
UNITS
UNITS
UNITS
UNITS
A/µs
V/µs
K/W
(kg)
mA
mA
mA
°C
µs
W
A
V
V
V
N
g
3