ST333S04PFM0P Vishay, ST333S04PFM0P Datasheet - Page 8

• Manufacturer Part Number: ST333S04PFM0P
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),330A I(T),TO-209AE
• Manufacturer: Vishay

Specifications of ST333S04PFM0P

• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.51 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST333SP Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
8
Dimensions
Device code
Note: For metric device M24 x 1.5 contact factory
10
1
2
3
4
5
6
7
8
9
ST
1
-
-
-
-
-
-
-
-
-
-
33
2
(gate and auxiliary cathode leads)
(gate and auxiliary cathode leads)
(see Voltage Ratings table)
1 = Fast-on terminals
Thyristor
Essential part number
3 = Fast turn-off
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4" 16UNF-2A
Reapplied dV/dt code (for t
t
0 = Eyelet terminals
Lead (Pb)-free
q
For technical questions, contact: [e-mail]
code (L = 15 µs)
3
3
LINKS TO RELATED DOCUMENTS
Inverter Grade Thyristors
(Stud Version), 330 A
S
4
08
5
RRM
q
test condition) F = 200 V/µs
P
6
F
7
http://www.vishay.com/doc?95080
L
8
0
9
10
P
Document Number: 94377
Revision: 30-Apr-08