ST333S04PFL0P Vishay, ST333S04PFL0P Datasheet - Page 3

• Manufacturer Part Number: ST333S04PFL0P
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),330A I(T),TO-209AE
• Manufacturer: Vishay

Specifications of ST333S04PFL0P

• Breakover Current Ibo Max: 11520 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94377
Revision: 30-Apr-08
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
For technical questions, contact: [e-mail]
SYMBOL
dI/dt
t
t
d
q
Inverter Grade Thyristors
(Stud Version), 330 A
SYMBOL
SYMBOL
SYMBOL
T
I
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
TM
TM
P
+ V
- V
R
dV/dt
R
I
J
J
J
R
I
P
V
RRM
V
T
DRM
G(AV)
I
I
I
GM
T
thCS
GT
GD
thJC
= T
= 25 °C, V
= T
GM
GD
Stg
GT
= 50 V, t
= 2 x dI/dt
= 550 A, commutating dI/dt = 40 A/µs
GM
J
GM
,
J
J
maximum, V
maximum,
p
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
See dimensions - link at the end of datasheet
DM
T
higher value available on request
T
= 500 µs, dV/dt = 200 V/µs
J
J
J
J
J
J
= T
= T
= 25 °C, V
= T
= T
= T
= Rated V
TEST CONDITIONS
J
J
J
J
J
DRM
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
= Rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
A
DRM
= 12 V, R
, I
TM
p
Vishay High Power Products
≤ 5 ms
DRM
= 50 A DC, t
a
= 6 Ω
DRM
DRM
/V
applied
RRM
p
DRM
= 1 µs
ST333SP Series
applied
,
- 40 to 125
- 40 to 150
TO-209AE (TO-118)
VALUES
VALUES
VALUES
VALUES
(425)
1000
0.25
0.10
0.03
48.5
500
200
535
1.0
15
50
60
10
10
20
20
5
3
www.vishay.com
(lbf · in)
UNITS
UNITS
UNITS
UNITS
N · m
A/µs
V/µs
K/W
mA
mA
mA
°C
µs
W
A
V
V
V
g
3