ST280S04P1V Vishay, ST280S04P1V Datasheet - Page 6

• Manufacturer Part Number: ST280S04P1V
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),280A I(T),TO-209AB
• Manufacturer: Vishay

Specifications of ST280S04P1V

• Breakover Current Ibo Max: 8220 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.28 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST280SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
Note: For metric device M16 x 1.5 contact factory
0.001
1
1
2
3
4
5
6
7
9
8
ST
Rec tangular gate pulse
a) R ecommended load line for
b) Recommended load line for
1
tr<=1 µs
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
-
-
-
-
-
-
-
-
-
For technical questions, contact: [e-mail]
28
2
VGD
1 = Fast-on terminals (gate and auxiliary cathode leads)
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4"-16UNF-2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
V = Glass-metal seal
Lead (Pb)-free
0.01
IGD
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
0
3
(Stud Version), 280 A
Device: S T 280S S eries
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
S
4
0.1
06
(b)
5
RRM
(a)
(see Voltage Ratings table)
P
6
1
Frequenc y Limited by PG(AV)
0
7
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
http://www.vishay.com/doc?95077
V
8
10
(1)
PbF
(2)
9
(3)
(4)
100
Document Number: 94402
Revision: 11-Aug-08