ST223C08CFL1 Vishay, ST223C08CFL1 Datasheet - Page 7

• Manufacturer Part Number: ST223C08CFL1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),390A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST223C08CFL1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93672
1 E 4
1 E 3
1 E 2
10000
1 E 1
1000
Fig. 11 - Reverse Recovered Charge Characteristics
2 5 0
2 0 0
1 5 0
1 0 0
100
5 0
R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s)
0
0
0
Fig. 9 - On-state Voltage Drop Characteristics
1 0 00 0
S T 2 2 3 C ..C S e rie s
T = 1 2 5 °C
In sta ntaneous O n-state Voltage (V )
5 00 0
J
3 00 0
2 0
2
2 50 0
1 E 2
P u lse Ba se w id t h (µ s)
1 50 0
4 0
4
ST223C..C Series
100 0
T = 25°C
T = 125°C
J
J
6 0
6
5 00
I
tp
TM
1 E 3
4 00
= 5 00 A
8 0
8
30 0 A
1 00 A
20 0 A
Fig. 13 - Frequency Characteristics
50 A
ST2 23 C.. C Serie s
Sinuso idal pulse
T
200
Snubb er c ircuit
R
C
V
C
s
s
D
= 40 °C
= 4 7 o hm s
= 80 % V
= 0. 22 µ F
1 0 0
1 00
10
5 0 Hz
D RM
1 E 4
1 E 4
1 E 1
1 E 1
10 00 0
0 .0 0 1
0 .0 1
Fig. 12 - Reverse Recovery Current Characteristics
1 6 0
1 4 0
1 2 0
1 0 0
Fig. 10 - Thermal Impedance Z
0 .1
5 00 0
8 0
6 0
4 0
2 0
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s)
0 .0 0 1
0
1
3 00 0
0
2 50 0
1 E 2
ST 2 2 3 C ..C S e rie s
P u lse Ba se w id t h (µ s)
1 50 0
S q ua re W a v e P u lse D u rat io n (s)
2 0
0 .0 1
Bulletin I25174 rev. B 04/00
I
T M
1 00 0
ST223C..C Series
= 50 0 A
20 0 A
30 0 A
10 0 A
4 0
50 0
50 A
t p
S t e a d y S ta t e V a lu e
R
(S in g le Sid e C o o le d )
R
(D o u b le S id e C o o le d )
(D C O p e ra tio n )
0 .1
thJ-hs
400
thJ-h s
1 E 3
ST 2 2 3 C ..C S e rie s
T = 1 2 5 °C
www.vishay.com
6 0
thJ-hs
J
ST2 23 C.. C Se ries
Sinuso idal pulse
T
20 0
C
Snubbe r circ uit
R
C
V
= 0 .1 7 K/ W
= 0 .0 8 K/ W
= 55 °C
Characteristics
s
s
D
= 4 7 o hm s
= 80 % V
= 0.22 µF
1
100
8 0
50 Hz
D RM
1 0 0
1 E 4
1 0
7