ST173C12CFK1 Vishay, ST173C12CFK1 Datasheet - Page 7

• Manufacturer Part Number: ST173C12CFK1
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),330A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST173C12CFK1

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 4900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94366
Revision: 29-Apr-08
100 000
10 000
1000
100
10
10
100
t
0.1
10
p
1
0.001
ST173C..C Series
Sinusoidal pulse
0.1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Pulse Basewidth (µs)
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
0.2
100
≤ 1 µs
0.3
0.5
1
2 3
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20 joules per pulse
1000
0.01
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
V
5
GD
(Hockey PUK Version), 330 A
10
I
r
GD
Inverter Grade Thyristors
≤ 1 µs
Device: ST173C..C Series
10 000
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
0.1
(b)
(a)
100 000
10 000
1
1000
100
Frequency limited by P
10
10
Vishay High Power Products
t
p
(1) P
(2) P
(3) P
(4) P
ST173C..C Series
Rectangular pulse
dI/dt = 50 A/µs
ST173CPBF Series
Pulse Basewidth (µs)
GM
GM
GM
GM
100
10
0.1
(1)
G(AV)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
0.2
0.3
0.5
(2)
1
p
p
p
p
2
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
3
1000
(3)
20 joules per pulse
5 10
(4)
100
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10 000
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