ST173C12CFK0L Vishay, ST173C12CFK0L Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
ST173C12CFK0L
Manufacturer Part Number
ST173C12CFK0L
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),330A I(T),TO-200AB
Manufacturer
Vishay
Datasheet
1.ST173C10CFK0.pdf
(9 pages)
Specifications of ST173C12CFK0L
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
40 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AB
Breakover Current Ibo Max
4900 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
1200 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST173CPBF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
Maximum turn-off time
2
2
t for fusing
√t for fusing
r
d
maximum
minimum
For technical questions, contact: ind-modules@vishay.com
760
730
600
350
40
SYMBOL
SYMBOL
V
V
I
180° el
I
T(RMS)
dI/dt
(Hockey PUK Version), 330 A
I
T(AV)
V
T(TO)1
T(TO)2
I
TSM
I
2
r
r
t
t
I
I
47/0.22
2
TM
t1
t2
d
q
H
L
√t
t
V
Inverter Grade Thyristors
50
DRM
50
660
590
490
270
T
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
I
55
TM
TM
TM
p
J
J
J
R
J
J
= 10 ms sine wave pulse
= T
= 25 °C, V
= T
= 25 °C, I
= 25 °C, V
= 50 V, t
= 300 A, commutating dI/dt = 20 A/µs
= 600 A, T
J
J
maximum, V
maximum,
T(AV)
T(AV)
p
T
), T
), T
DM
A
= 500 µs, dV/dt: See table in device code
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
1200
1260
1200
T(AV)
T(AV)
850
= 12 V, R
40
= T
J
J
= Rated V
TEST CONDITIONS
TEST CONDITIONS
= T
= T
180° el
J
< I < π x I
< I < π x I
DRM
maximum,
47/0.22
J
J
V
maximum
maximum
RRM
RRM
50
DRM
-
= Rated V
a
= 6 Ω, I
DRM
T(AV)
T(AV)
1030
1080
1030
Sinusoidal half wave,
initial T
I
, I
720
TM
55
TM
), T
), T
G
DRM
= 50 A DC, t
= 1 A
J
J
J
= T
= T
= T
, I
TM
J
J
J
maximum
maximum
maximum
= 2 x dI/dt
5570
2800
1620
800
40
p
= 1 µs
100 µs
47/0.22
V
Document Number: 94366
50
DRM
-
330 (120)
VALUES
VALUES
55 (85)
Revision: 29-Apr-08
4920
2460
1390
1000
I
4680
4900
3940
4120
1100
1000
680
2.07
1.55
1.61
0.87
0.77
TM
610
110
100
600
1.1
55
15
30
77
71
UNITS
UNITS
UNITS
kA
Ω/µF
A/µs
A/µs
kA
mΩ
mA
µs
°C
°C
A
V
A
A
V
2
2
√s
s