ST110S12P1V Vishay, ST110S12P1V Datasheet - Page 4
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ST110S12P1V
Manufacturer Part Number
ST110S12P1V
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),110A I(T),TO-209AC
Manufacturer
Vishay
Datasheet
1.ST110S12P0V.pdf
(8 pages)
Specifications of ST110S12P1V
Breakover Current Ibo Max
2830 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.52 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST110SPbF Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
4
R
CONDUCTION ANGLE
thJC
130
120
110
100
CONDUCTION
90
80
180°
120°
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
0
Average On-state Current (A)
20
ST110S Series
R
thJC
40
30°
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
160
140
120
100
(DC) = 0.195 K/W
80
60
40
20
For technical questions within your region, please contact one of the following:
0
60°
60
SINUSOIDAL CONDUCTION
0
Conduction Angle
90°
RMS Limit
80
Average On-state Current (A)
20
180°
120°
120°
90°
60°
30°
100
40
0.035
0.041
0.052
0.076
0.126
180°
Fig. 3 - On-State Power Loss Characteristics
120
60
Phase Control Thyristors
ST110S Series
T = 125°C
Conduction Angle
(Stud Version), 110 A
J
80
100
thJC
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
120
25
Maximum Allowable Ambient Temperature (°C)
50
0.025
0.042
0.056
0.079
0.127
DiodesEurope@vishay.com
130
120
110
100
90
80
75
Fig. 2 - Current Ratings Characteristics
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
30°
100
ST110S Series
R
thJC
60°
(DC) = 1.95 K/W
90°
125
TEST CONDITIONS
120°
T
Conduction Period
J
= T
180°
Document Number: 94393
J
maximum
DC
Revision: 17-Aug-10
UNITS
K/W