ST110S08P0VPBF Vishay, ST110S08P0VPBF Datasheet - Page 5
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ST110S08P0VPBF
Manufacturer Part Number
ST110S08P0VPBF
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
Manufacturer
Vishay
Datasheet
1.ST110S12P0V.pdf
(8 pages)
Specifications of ST110S08P0VPBF
Breakover Current Ibo Max
2830 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.52 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94393
Revision: 17-Aug-10
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
2400
2200
2000
1800
1600
1400
1200
1000
1
At Any Rated Load Condition And With
Rated V
ST110S Series
RRM
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Applied Following Surge.
For technical questions within your region, please contact one of the following:
220
200
180
160
140
120
100
10
80
60
40
20
0
0
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
RMS Limit
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
180°
120°
J
DC
90°
60°
30°
10000
1000
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 4 - On-State Power Loss Characteristics
100
10
100
Phase Control Thyristors
0.5
(Stud Version), 110 A
Conduction Period
Instantaneous On-state Voltage (V)
ST110S Series
T = 125°C
J
1.5
Tj = 125˚C
Tj = 25˚C
ST110S Series
2.5
25
Maximum Allowable Ambient Temperature (°C)
3.5
50
4.5
Fig. 6 - Maximum Non-Repetitive Surge Current
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
DiodesEurope@vishay.com
0.01
Of Conduction May Not Be Maintained.
75
Maximum Non Repetitive Surge Current
ST110S Series
Versus Pulse Train Duration. Control
Pulse Train Duration (s)
100
Vishay Semiconductors
0.1
ST110SPbF Series
Initial T = 125°C
No Voltage Reapplied
Rated V
125
J
RRM
1
Reapplied
www.vishay.com
10
5