ST103S08PFN2 Vishay, ST103S08PFN2 Datasheet - Page 4
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ST103S08PFN2
Manufacturer Part Number
ST103S08PFN2
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),ST-RG-TK-3/4
Manufacturer
Vishay
Datasheet
1.ST103S04PFL0.pdf
(9 pages)
Specifications of ST103S08PFN2
Breakover Current Ibo Max
3150 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.73 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST103SP Series
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
4
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
130
120
110
100
180
160
140
120
100
90
80
80
60
40
20
180°
120°
90°
60°
30°
0
0
0
Fig. 1 - Current Ratings Characteristics
10
10
RMS limit
Average On-State Current (A)
Average On-State Current (A)
20
20
180°
120°
ST103S Series
R
90°
60°
30°
thJC
30
30
30°
(DC) = 0.195 K/W
40
40
SINUSOIDAL CONDUCTION
50
50
60°
60
60
For technical questions, contact: ind-modules@vishay.com
90° 120°
Conduction angle
Conduction angle
70
70
ST083S Series
T
0.034
0.040
0.052
0.076
0.126
J
80
80
= 125 °C
Ø
Ø
Inverter Grade Thyristors
90
90
180°
Fig. 3 - On-State Power Loss Characteristics
(Stud Version), 105 A
100 110
100 110
thJC
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
180
160
140
120
100
130
120
110
100
90
80
70
80
60
40
20
0
Maximum Allowable Ambient Temperature (°C)
25
0
Fig. 2 - Current Ratings Characteristics
20
Average On-State Current (A)
30°
40
ST103S Series
R
50
thJC
60° 90°
60
(DC) = 0.195 K/W
TEST CONDITIONS
T
J
80
= T
75
J
100
Document Number: 94365
120° 180°
maximum
Conduction period
120
Revision: 29-Apr-08
100
140
Ø
DC
160
UNITS
125
K/W
180