ST083S10PFK1 Vishay, ST083S10PFK1 Datasheet - Page 3
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ST083S10PFK1
Manufacturer Part Number
ST083S10PFK1
Description
SILICON CONTROLLED RECTIFIER,1kV V(DRM),85A I(T),TO-209AC
Manufacturer
Vishay
Datasheet
1.ST083S12PFK0.pdf
(9 pages)
Specifications of ST083S10PFK1
Breakover Current Ibo Max
2560 A
Rated Repetitive Off-state Voltage Vdrm
1000 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
2.15 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note
• The table above shows the increment of thermal resistance R
Document Number: 94334
Revision: 25-Nov-09
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and
off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact:
0.034
0.041
0.052
0.076
0.126
Inverter Grade Thyristors
SYMBOL
SYMBOL
SYMBOL
+ V
P
- V
dV/dt
R
R
I
(Stud Version), 85 A
I
P
V
V
T
RRM
I
DRM
I
G(AV)
I
GM
T
thCS
GT
GD
thJC
GM
GD
Stg
GT
GM
GM
J
,
thJC
T
T
T
T
T
higher value available on request
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
J
J
J
J
J
J
RECTANGULAR CONDUCTION
= T
= T
= 25 °C, V
= T
when devices operate at different conduction angles than DC
= T
= T
J
J
J
J
J
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
indmodules@vishay.com
A
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= 12 V, R
0.025
0.042
0.056
0.079
0.127
p
≤ 5 ms
a
= 6 Ω
Vishay High Power Products
DRM
DRM
/V
/V
RRM
RRM
DRM
applied
applied
ST083SPbF Series
,
TEST CONDITIONS
T
J
= T
J
maximum
- 40 to 125
- 40 to 150
VALUES
VALUES
VALUES
TO-209AC (TO-94)
0.195
(137)
(120)
0.25
0.08
15.5
500
200
130
30
40
20
20
14
5
5
5
3
www.vishay.com
(lbf · in)
UNITS
UNITS
UNITS
UNITS
N · m
V/μs
K/W
K/W
mA
mA
mA
°C
W
A
V
V
V
g
3