SIS412DN-T1-GE3 Vishay, SIS412DN-T1-GE3 Datasheet - Page 5

N-CHANNEL 30-V (D-S) MOSFET

SIS412DN-T1-GE3

Manufacturer Part Number
SIS412DN-T1-GE3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SIS412DN-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
435pF @ 15V
Power - Max
15.6W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A
Power Dissipation
3200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
PowerPAK
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SIS412DN-T1-GE3TR

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
25
20
15
10
5
0
0
Package Limited
25
T
D
C
Current Derating*
50
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
New Product
16
12
8
4
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiS412DN
125
www.vishay.com
150
5

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