SIR164DP-T1-GE3 Vishay, SIR164DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR164DP-T1-GE3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR164DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 15V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 2.05mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0025 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33.3 A
• Power Dissipation: 5.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR164DP-T1-GE3TR

SiR164DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
- 0.7
- 1.0
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
75
T
0.8
J
= 25 °C
0.01
100
0.1
Limited by R
10
100
1
0.01
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
= 5 mA
T
A
GS
= 25 °C
DS(on)
New Product
> minimum V
1.2
150
V
0.1
DS
*
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS Limited
0.012
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0
10
0 .
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1
T
1
J
= 25 °C
1 ms
10 ms
1 s
10 s
DC
100 ms
2
V
0.01
100
GS
Single Pulse Power
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
T
S09-0701-Rev. A, 27-Apr-09
J
= 125 °C
Document Number: 64827
6
7
1
I
D
8
= 15 A
9
10
1
0