SI9945BDY-T1-GE3 Vishay, SI9945BDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI9945BDY-T1-GE3
• Description: DUAL N-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9945BDY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.058Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si9945BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64737.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
Single Pulse
-3
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
1
S09-0321-Rev. A, 02-Mar-09
= P
t
2
Document Number: 64737
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 90 °C/W
600
10