SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8800EDB-T2-E1
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8800EDB-T2-E1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 8V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI8800EDB-T2-E1TR

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.14
0.12
0.10
0.08
0.06
0.04
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0
I
D
V
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 1.5 A; T
GS
- 25
= 4.5 V, V
1
V
GS
T
0
J
J
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
GS
I
D
25
= 2.5 V, V
= 0.5 A; T
2
50
I
V
I
D
D
GS
J
GS
= 0.5 A; T
= 1.5 A; T
= 25 °C
3
75
= 1.8 V; I
14
12
10
= 1.5 V; I
8
6
4
2
0
0.001
100
Single Pulse Power (Junction-to-Ambient)
J
J
D
D
= 125 °C
= 125 °C
4
= 1 A
0.01
= 0.5 A
125
150
5
0.1
Time (s)
1
10
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
100
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
1000
0.2
V
SD
0
- Source-to-Drain Voltage (V)
0.4
T
Threshold Voltage
T
J
J
25
- Temperature (°C)
= 150 °C
0.6
S10-1046-Rev. A, 03-May-10
50
Document Number: 66700
I
D
= 250 μA
75
0.8
T
J
= 25 °C
100
1.0
125
150
1.2