SI7886ADP-T1-E3 Vishay, SI7886ADP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7886ADP-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),LLCC
• Manufacturer: Vishay

www.vishay.com
4
Si7886ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
0.01
−50
0.1
2
1
10
−25
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
Single Pulse
= 250 mA
− Temperature (_C)
25
10
−3
50
*Limited by r
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
DS(on)
1
0.1
−2
125
*V
Safe Operating Area, Junction-to-Case
GS
Square Wave Pulse Duration (sec)
u minimum V
150
V
DS
Single Pulse
T
− Drain-to-Source Voltage (V)
10
C
1
−1
= 25_C
GS
at which r
DS(on)
10
1
200
160
120
is specified
80
40
0
0.001
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
dc
100 s
10 s
100
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
t
1
A
Time (sec)
= P
t
2
DM
0.1
Z
thJA
thJA
100
S-51016—Rev. B, 23-May-05
t
t
1
2
(t)
Document Number: 73156
= 65_C/W
1
600
10