SI7682DP-T1-E3 Vishay, SI7682DP-T1-E3 Datasheet

SI7682DP-T1-E3

Manufacturer Part Number

SI7682DP-T1-E3

Description

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17.5A I(D),LLCC

Manufacturer

Vishay

Datasheets

1.SI7682DP-T1-E3.pdf (7 pages)

2.SI7682DP-T1-E3.pdf (13 pages)

Specifications of SI7682DP-T1-E3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.009 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

17.5 A

Power Dissipation

5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK SO-8

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

HardFindElectronics Ltd

Part Number:

SI7682DP-T1-E3

Manufacturer:

VISHAY

Quantity:

180

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7682DP-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Based on T

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

Document Number: 73350

S09-0272-Rev. B, 16-Feb-09

Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free)

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

(V)

6.15 mm

= 25 °C.

0.0130 at V

0.0090 at V

Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

DS(on)

PowerPAK SO-8

Bottom View

(Ω)

= 4.5 V

= 10 V

= 150 °C)

b, f

N-Channel 30-V (D-S) MOSFET

5.15 mm

(A)

d, e

= 25 °C, unless otherwise noted

Steady State

11 nC

(Typ.)

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

• High-Side DC/DC Conversion

Symbol

Available

- Notebook

- Server

, T

thJA

thJC

stg

Tested

Power MOSFET

Typical

3.5

N-Channel MOSFET

- 55 to 150

17.5

14.0

4.5

3.2

Limit

± 20

15.5

27.5

17.5

260

b, c

Maximum

4.5

Vishay Siliconix

Si7682DP

www.vishay.com

°C/W

Unit

°C

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