SI7625DN-T1-GE3 Vishay, SI7625DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7625DN-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7625DN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 126nC @ 10V
• Input Capacitance (ciss) @ Vds: 4427pF @ 15V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Gate Charge Qg: 84.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 3.7 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7625DN-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
65
52
39
26
13
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
70
56
42
28
14
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
Package Limited
25
T
150
C
- Case Temperature (°C)
Current Derating*
50
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7625DN
www.vishay.com
125
150
5