SI7149DP-T1-GE3 Vishay, SI7149DP-T1-GE3 Datasheet

P-CHANNEL 30-V (D-S) MOSFET

SI7149DP-T1-GE3

Manufacturer Part Number
SI7149DP-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI7149DP-T1-GE3

Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
4.2mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
25V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
5.2 mOhms at 10 V
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
42 A
Power Dissipation
6.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 65 °C/W.
d. Package limited.
e. See Solder Profile
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68934
S-82620-Rev. A, 03-Nov-08
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
0.0052 at V
0.0094 at V
8
6.15 mm
D
7
(http://www.vishay.com/doc?73257).
R
D
DS(on)
Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
GS
D
GS
Bottom View
PowerPAK SO-8
(Ω)
= - 4.5 V
5
J
= - 10 V
D
= 150 °C)
a, c
1
P-Channel 30-V (D-S) MOSFET
S
2
I
- 50
- 50
D
S
(A)
3
d
d
S
5.15 mm
e, f
4
G
A
Q
= 25 °C, unless otherwise noted
g
51 nC
(Typ.)
The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
Steady State
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100% R
• 100% UIS Tested
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
g
D
stg
Tested
®
Power MOSFET
Typical
1.2
19
- 55 to 150
- 23.7
- 18.7
- 4.3
5.2
3.3
Limit
- 50
- 50
- 50
± 25
44.4
Maximum
- 30
- 70
- 20
260
20
69
a, b
a, b
a, b
d
d
a, b
a, b
d
1.8
Vishay Siliconix
24
G
Si7149DP
P-Channel MOSFET
www.vishay.com
S
D
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7149DP-T1-GE3 Summary of contents

Page 1

... S 6. Bottom View Ordering Information: Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7149DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68934 S-82620-Rev. A, 03-Nov-08 New Product 1.5 2.0 2.5 7000 5600 4200 2800 1400 1.8 1.5 1 0.9 0 105 Si7149DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si7149DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 ...

Page 5

... Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7149DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si7149DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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