SI5499DC-T1-E3 Vishay, SI5499DC-T1-E3 Datasheet

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SI5499DC-T1-E3

Manufacturer Part Number
SI5499DC-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,6A I(D),LLCC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI5499DC-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 5.1A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 8V
Input Capacitance (ciss) @ Vds
1290pF @ 4V
Power - Max
6.2W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 5 V
Continuous Drain Current
6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI5499DC-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5499DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73321
S-83054-Rev. C, 29-Dec-08
Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
DS
- 8
(V)
D
1206-8 ChipFET
D
Bottom View
D
0.036 at V
0.045 at V
0.056 at V
0.077 at V
D
S
D
Si5499DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
D
1
GS
GS
GS
GS
®
G
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
J
a, b
= 150 °C)
Marking Code
BP
P-Channel 1.5-V (G-S) MOSFET
a, b
a, b
XXX
Part #
Code
I
D
- 6
- 6
- 6
- 6
(A)
Lot Traceability
and Date Code
e
c, d
A
= 25 °C, unless otherwise noted
Q
g
14 nC
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra-Low On-Resistance
• Load Switch for Portable Devices
Symbol
T
J
Available
- Guaranteed Operation at V
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
Optimized Design and Longer Battery Life
stg
®
Power MOSFET: 1.5 V Rated
G
P-Channel MOSFET
- 55 to 150
- 6
- 5.6
- 2.1
2.5
1.6
Limit
- 5.2
- 25
260
- 6
- 6
± 5
6.2
- 8
a, b, e
S
D
4
a, b
a, b
e
e
a, b
a, b
GS
Vishay Siliconix
= 1.5 V Critical for
Si5499DC
www.vishay.com
Unit
°C
W
V
A
1

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SI5499DC-T1-E3 Summary of contents

Page 1

... Marking Code Bottom View Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free) Si5499DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current a, b Maximum Power Dissipation ...

Page 2

... Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 95 °C/W. SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73321 S-83054-Rev. C, 29-Dec-08 Symbol Test Conditions ° 2 5.6 A, dI/dt = 100 A/µ Si5499DC Vishay Siliconix Min. Typ. Max 0 ° www.vishay.com Unit ...

Page 4

... Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage ( Output Characteristics 0. 0.08 0.07 0.06 0.05 0.04 0.03 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com thru 2.5 V ...

Page 5

... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si5499DC Vishay Siliconix 0.10 0.08 0. 125 ° °C A 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Time (s) ...

Page 6

... Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com Package Limited 100 T - Case Temperature (°C) ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73321. Document Number: 73321 S-83054-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5499DC Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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