SI4933DY-T1-E3 Vishay, SI4933DY-T1-E3 Datasheet - Page 5
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SI4933DY-T1-E3
Manufacturer Part Number
SI4933DY-T1-E3
Description
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,12V V(BR)DSS,7.4A I(D),SO
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4933DY-T1-E3.pdf
(9 pages)
Specifications of SI4933DY-T1-E3
Rohs Compliant
YES
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
1V @ 500µA
Gate Charge (qg) @ Vgs
70nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4933DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4933DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 962
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71980.
Document Number: 71980
S09-0867-Rev. D, 18-May-09
0.01
0.1
2
1
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4933DY
www.vishay.com
10
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