SI4836DY-T1-E3 Vishay, SI4836DY-T1-E3 Datasheet - Page 3
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SI4836DY-T1-E3
Manufacturer Part Number
SI4836DY-T1-E3
Description
TRANSISTOR,MOSFET,N-CHANNEL,12V V(BR)DSS,17A I(D),SO
Manufacturer
Vishay
Datasheet
1.SI4836DY-T1-E3.pdf
(5 pages)
Specifications of SI4836DY-T1-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0031 Ohms
Gate Charge Qg
75 nC
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.9 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4836DY-T1-E3
Manufacturer:
NXP
Quantity:
500
Company:
Part Number:
SI4836DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4836DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71692
S09-0221-Rev. E, 09-Feb-09
0.006
0.005
0.004
0.003
0.002
0.001
0.000
60
10
1
6
5
4
3
2
1
0
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
10
= 25 A
On-Resistance vs. Drain Current
T
14
J
= 6 V
= 150 °C
V
SD
Q
g
- Source-to-Drain Voltage (V)
0.4
I
20
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
28
0.6
30
T
J
= 25 °C
42
0.8
V
40
V
GS
V
GS
GS
= 1.8 V
= 2.5 V
= 4.5 V
56
1.0
50
1.2
70
60
0.015
0.012
0.009
0.006
0.003
0.000
8000
6400
4800
3200
1600
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
- 25
V
I
D
GS
= 25 A
2
= 4.5 V
2
V
C
V
C
GS
DS
C
oss
0
T
rss
iss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
4
25
Capacitance
4
50
Vishay Siliconix
6
6
75
I
D
Si4836DY
= 25 A
8
www.vishay.com
100
8
10
125
150
10
12
3