SI4833ADY-T1-E3 Vishay, SI4833ADY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4833ADY-T1-E3
• Description: RECTIFIER DIODE,SCHOTTKY,30V V(RRM),SO
• Manufacturer: Vishay

Specifications of SI4833ADY-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.85 A
• Power Dissipation: 1930 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4833ADY-T1-E3TR

Si4833ADY
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
a
J
V
= 25 °C, unless otherwise noted)
Symbol
V
R
V
I
GS(th)/TJ
t
t
t
t
I
I
C
V
D(on)
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
Q
g
Q
R
DS/TJ
I
SM
t
t
t
oss
t
t
t
t
DS
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
g
rr
I
V
F
V
V
I
V
I
DS
D
DS
= - 2 A, dI/dt = 100 A/µs, T
D
DS
DS
 - 2 A, V
 - 2 A, V
= - 15 V, V
= - 15 V, V
= - 30 V, V
V
V
= - 15 V, V
V
V
V
V
V
V
V
V
GS
I
DS
DS
GS
DS
DS
DD
DD
DS
S
DS
= - 1.4 A, V
Test Conditions
= V
= - 4.5 V, I
- 5 V, V
= - 10 V, I
= - 15 V, I
= 0 V, I
= 0 V, V
= - 15 V, R
= - 15 V, R
= - 30 V, V
I
GEN
T
D
GEN
f = 1 MHz
GS
C
= 250 µA
GS
GS
GS
GS
= 25 °C
, I
= - 4.5 V, R
= - 10 V, R
D
= - 4.5 V, I
D
= - 10 V, I
GS
= 0 V, T
= 0 V, f = 1 MHz
GS
= - 250 µA
= - 250 µA
D
D
D
GS
GS
L
L
= ± 20 V
= - 3.6 A
= - 3.6 A
= - 2.8 A
= - 10 V
= 7.5 
= 7.5 
= 0 V
= 0 V
J
D
= 75 °C
D
g
J
g
= 25 °C
= - 3 A
= 1 
= - 3 A
= 1 
Min.
- 30
- 1
- 5
S10-2547-Rev. D, 08-Nov-10
0.059
0.090
Typ.
- 0.8
- 28
380
100
3.5
9.8
4.6
1.4
2.4
- 2
75
20
59
26
19
11
19
23
12
10
13
Document Number: 73627
7
8
7
8
± 100
0.072
0.110
Max.
- 2.5
- 4.6
- 1.2
- 10
750
- 20
7.0
- 1
15
16
30
90
40
30
14
17
30
15
40
20
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns


V
V
A
S
A
V