SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68695
S09-0764-Rev. B, 04-May-09
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-5
-6
-1
1
0.0
0
Source-Drain Diode Forward Voltage
0.2
25
V
Reverse Current (Schottky)
SD
- Source-to-Drain Voltage (V)
30 V
0.4
T
T
50
J
J
= 150 °C
- Temperature (°C)
T
J
20 V
0.6
= 25 °C
75
Limited by R
0.01
100
100
0.1
0.8
10
1
0.1
10 V
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
DS(on)
125
GS
A
1.0
= 25 °C
> minimum V
*
V
New Product
DS
150
1.2
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
Limited
10
DS(on)
0.030
0.026
0.022
0.018
0.014
0.010
is specified
40
30
20
10
0
0.01
0
100 µs
100 ms
DC
1 ms
10 ms
10 s
1 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
4
V
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
Vishay Siliconix
12
Si4622DY
1
I
www.vishay.com
D
T
T
J
= 9.6 A
J
= 125 °C
16
= 25 °C
20
10
5