SI4453DY-T1-E3 Vishay, SI4453DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4453DY-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,10A I(D),SO
• Manufacturer: Vishay

Si4453DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
I
D
T
Threshold Voltage
= 600 µA
J
- Temperature (°C)
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Limited by R
100
0.1
0.1
10
100
10
1
0.1
-2
* V
DS(on)
125
Safe Operating Area, Junction-to-Case
DS
> minimum V
*
150
Square Wave Pulse Duration (s)
V
DS
Single Pulse
- Drain-to-Source Voltage (V)
T
10
C
1
= 25 °C
-1
GS
at which R
DS(on)
10
100
1
80
60
40
20
0
0.001
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
Single Pulse Power, Junction-to-Ambient
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
Time (s)
= P
S09-0705-Rev. C, 27-Apr-09
t
0.1
2
DM
Document Number: 72175
Z
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
1
600
10