SI4166DY-T1-GE3 Vishay, SI4166DY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4166DY-T1-GE3
• Description: N-CHANNEL 30V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4166DY-T1-GE3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0039 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 65 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4166DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68953.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.02
0.05
0.05
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.02
0.1
0.2
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
A
1
= P
S-82661-Rev. A, 03-Nov-08
t
Document Number: 68953
2
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
1
0