SI4124DY-T1-E3 Vishay, SI4124DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4124DY-T1-E3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4124DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4124DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.3
- 0.6
- 0.9
0.01
100
0.6
0.3
0.0
0.1
10
- 50
1
0.0
I
D
- 25
= 5 mA
Source-Drain Diode Forward Voltage
0.2
I
D
V
T
SD
= 250 µA
0
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
= 150 °C
25
0.6
50
75
0.8
T
J
0.01
100
= 25 °C
0.1
10
100
1
0.1
Limited by R
1.0
Safe Operating Area, Junction-to-Ambient
Single Pulse
* V
125
T
A
DS
= 25 °C
New Product
> minimum V
150
1.2
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS
Limited
DS(on)
10
0.03
0.02
0.01
0.00
170
136
102
68
34
0
0
0 .
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power (Junction-to-Ambient)
1
100 s, DC
10 s
1 ms
100 µs
10 ms
100 ms
1 s
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
S09-0392-Rev. B, 09-Mar-09
5
Document Number: 68601
6
7
1
T
T
I
D
J
J
8
= 125 °C
= 14 A
= 25 °C
9
10
1
0