SI4124DY-T1-E3 Vishay, SI4124DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4124DY-T1-E3
• Description: N-CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4124DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
0.010
0.008
0.006
0.004
0.002
0.000
50
40
30
20
10
10
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
I
D
= 16 A
10
11
V
V
0.5
DS
Output Characteristics
GS
Q
- Drain-to-Source Voltage (V)
g
= 10 V thru 4 V
I
- Total Gate Charge (nC)
D
V
- Drain Current (A)
DS
Gate Charge
20
22
= 20 V
1.0
V
V
GS
GS
V
DS
30
33
= 4.5 V
= 10 V
= 10 V
V
V
GS
DS
1.5
= 3 V
= 30 V
40
44
New Product
2.0
50
55
4000
3200
2400
1600
2.0
1.6
1.2
0.8
0.4
800
10
- 50
8
6
4
2
0
0
0
0
I
D
On-Resistance vs. Junction Temperature
= 14 A
C
- 25
rss
C
oss
V
V
T
0
10
Transfer Characteristics
DS
GS
J
1
T
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
C
= 125 °C
25
= 25 °C
Capacitance
50
20
2
Vishay Siliconix
V
75
GS
C
Si4124DY
iss
= 10 V
100
V
www.vishay.com
T
30
GS
3
C
= - 55 °C
= 4.5 V
125
150
40
4
3