SI1065X-T1-E3 Vishay, SI1065X-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI1065X-T1-E3
• Description: P-CHANNEL 12-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1065X-T1-E3

• Rohs Compliant: YES
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.18A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 6V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1065X-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.012
0.020
(0.300)
(0.500)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72605
www.vishay.com
Revision: 21-Jan-08
21