SEMIX302GB12E4S SEMIKRON, SEMIX302GB12E4S Datasheet - Page 4

no-image

SEMIX302GB12E4S

Manufacturer Part Number
SEMIX302GB12E4S
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX302GB12E4S

Family/system
SEMiX
Voltage (v)
1200
Current (a)
300
Chip-type
IGBT 4 (Trench)
Case
SEMiX 2s
SEMiX302GB12E4s
4
Fig. 7: Typ. switching times vs. I
Fig. 9: Typ. transient thermal impedance
Fig. 11: Typ. CAL diode peak reverse recovery current
C
Rev. 1 – 17.01.2012
Fig. 8: Typ. switching times vs. gate resistor R
Fig. 10: Typ. CAL diode forward charact., incl. R
Fig. 12: Typ. CAL diode recovery charge
© by SEMIKRON
G
CC'+EE'

Related parts for SEMIX302GB12E4S