MSRT20060(A) GeneSiC Semiconductor, MSRT20060(A) Datasheet
![Standard Recovery - 600 V - 200 A - Three Tower](/photos/16/5/160504/3tower_sml.jpg)
MSRT20060(A)
Manufacturer Part Number
MSRT20060(A)
Description
Standard Recovery - 600 V - 200 A - Three Tower
Manufacturer
GeneSiC Semiconductor
Datasheet
1.MSRT20060A.pdf
(2 pages)
Specifications of MSRT20060(A)
Product
Standard Recovery Rectifier
Reverse Voltage
600 V
Forward Voltage Drop
1.2 V
Forward Continuous Current
200 A
Max Surge Current
3000 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
Module
Lead Free Status / Rohs Status
Details
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 1600 V V
Maximum ratings, at T
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Standard
Recovery Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified
g
Symbol
Symbol
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
V
T
V
I
R
C
F
R
= 600 V, T
= 25 °C, t
= 200 A, T
= 600 V, T
Conditions
T
Conditions
C
≤ 140 °C
p
j
j
= 8.3 ms
j
= 150 °C
= 25 °C
= 25 °C
MSRT20060(A) thru MSRT200100(A)
1
MSRT20060(A)
MSRT20060(A)
-40 to 175
-40 to 175
3000
0.18
600
424
600
200
1.2
10
5
MSRT20080(A)
MSRT20080(A)
-40 to 175
-40 to 175
3000
0.18
800
566
800
200
1.2
10
5
V
I
F
RRM
= 200 A
Three Tower Package
= 600 V - 1600 V
MSRT200100(A)
MSRT200100(A)
-40 to 175
-40 to 175
1000
1000
3000
0.18
707
200
1.2
10
5
°C/W
Unit
Unit
mA
μA
°C
°C
V
V
V
A
A
V
Related parts for MSRT20060(A)
MSRT20060(A) Summary of contents
Page 1
... F,SM current, Half Sine Wave Operating temperature T Storage temperature Electrical characteristics °C, unless otherwise specified Parameter Symbol V Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction - R case www.genesicsemi.com MSRT20060(A) thru MSRT200100(A) Conditions MSRT20060(A) RRM RMS DC T ≤ 140 ° ° 8 ...
Page 2
... MSRT20060(A) thru MSRT200100(A) 2 ...