MBR1545CT-E3/45 Vishay, MBR1545CT-E3/45 Datasheet - Page 3

Diode

MBR1545CT-E3/45

Manufacturer Part Number
MBR1545CT-E3/45
Description
Diode
Manufacturer
Vishay
Datasheet

Specifications of MBR1545CT-E3/45

Leaded Process Compatible
Yes
Voltage - Forward (vf) (max) @ If
840mV @ 15A
Current - Reverse Leakage @ Vr
100µA @ 45V
Current - Average Rectified (io) (per Diode)
7.5A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
15 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.84 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR1545CT-E3/45
Manufacturer:
Vishay Semiconductors
Quantity:
1 940
Part Number:
MBR1545CT-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
MBR1545CT-E3/45
Quantity:
70 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88670
Revision: 08-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
175
150
125
100
100
0.1
25
20
15
10
75
50
25
10
5
0
1
0
1
0
Figure 1. Forward Current Derating Curve
T
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
J
= 125 °C
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
Case Temperature (°C)
Current Per Diode
50
T
8.3 ms Single Half Sine-Wave
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
J
Resistive or Inductive Load
= T
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
For technical questions within your region, please contact one of the following:
10
T
J
J
Max.
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
100
100
150
MBR(F,B)1535CT thru MBR(F,B)1560CT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
0.001
0.01
100
100
100
0.1
0.1
10
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
MBR1535CT - MBR1545CT
MBR1550CT & MBR1560CT
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
40
1
60
T
T
J
J
10
= 125 °C
= 75 °C
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
T
= 50 mVp-p
J
80
= 25 °C
www.vishay.com
100
100
100
3

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