MB4S-E3/45 Vishay, MB4S-E3/45 Datasheet - Page 3
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MB4S-E3/45
Manufacturer Part Number
MB4S-E3/45
Description
BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),SO
Manufacturer
Vishay
Specifications of MB4S-E3/45
Lead Free Status
Contains lead
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
500mA
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-269AA (MBS)
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
400mA
Forward Voltage Vf Max
1V
Diode Mounting Type
SMD
Operating Temperature Range
-55°C To +150°C
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
400V
Rms Voltage (max)
280V
Peak Non-repetitive Surge Current (max)
35A
Avg. Forward Curr (max)
800mA
Rev Curr
5uA
Forward Voltage
1V
Package Type
TO-269AA
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Other names
MB4S
MB4S
MB4S/45
MB4S/45
MB4S
MB4S/45
MB4S/45
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88661
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
J
0.161 (4.10)
40
= 125 °C
= 25 °C
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For technical questions within your region, please contact one of the following:
0.9
0.029 (0.74)
0.017 (0.43)
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
MB2S, MB4S & MB6S
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3