KBU4K-E4/51 Vishay, KBU4K-E4/51 Datasheet - Page 3

• Manufacturer Part Number: KBU4K-E4/51
• Description: 4A,800V,IN-LINE BRIDGE RECT.
• Manufacturer: Vishay

Specifications of KBU4K-E4/51

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 4A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (KBU)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 800 V
• Maximum Rms Reverse Voltage: 560 V
• Max Surge Current: 200 A
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 23.7 mm
• Width: 7.1 mm
• Height: 19.3 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 800V
• Rms Voltage (max): 560V
• Peak Non-repetitive Surge Current (max): 200A
• Avg. Forward Curr (max): 4A
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: Case KBU
• Operating Temp Range: -50C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88656
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
50
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
[e-mail], [e-mail], [e-mail]
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
T
1.0
J
60
= 100 °C
T
J
= 25 °C
1.1
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
150
100
75
50
25
0.052 (1.3)
0.048 (1.2)
0
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.1
0.165 (4.2)
0.185 (4.7)
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU4A thru KBU4M
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3