KBP10M-E4/1 Vishay, KBP10M-E4/1 Datasheet - Page 3

• Manufacturer Part Number: KBP10M-E4/1
• Description: Diode
• Manufacturer: Vishay

Specifications of KBP10M-E4/1

• Repetitive Reverse Voltage Vrrm Max: 1kV
• Diode Type: Bridge Rectifier
• Current Rating: 1.5A
• Leaded Process Compatible: Yes
• Forward Voltage: 1kV
• Forward Current If: 1.5A
• Package / Case: KBPM
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1kV
• Rms Voltage (max): 700V
• Peak Non-repetitive Surge Current (max): 60A
• Avg. Forward Curr (max): 1.5@Ta=40CA
• Rev Curr: 5uA
• Package Type: Case KBPM
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88531
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.01
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
0.6
Instantaneous Forward Voltage (V)
20
T
0.8
J
= 25 °C
40
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T
1.0
J
For technical questions within your region, please contact one of the following:
= 100 °C
T
J
= 125 °C
60
1.2
0.180 (4.57)
0.200 (5.08)
0.028 (0.76)
0.034 (0.86)
0.125 x 45°
DIA.
Polarity shown on front side of case: positive lead by beveled corner
(3.2)
80
1.4
(15.2)
KBP005M thru KBP10M, 3N246 thru 3N252
0.60
MIN.
1.6
100
0.600 (15.24)
0.560 (14.22)
Case Style KBPM
(1.52)
0.060
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) MIN.
0.460 (11.68)
0.420 (10.67)
100
10
0.105 (2.67)
0.085 (2.16)
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
Vishay General Semiconductor
0.460 (11.68)
0.500 (12.70)
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
3