IRLR014TR Vishay, IRLR014TR Datasheet - Page 6

• Manufacturer Part Number: IRLR014TR
• Description: LOGIC MOSFET N-CHANNEL 60V
• Manufacturer: Vishay

Specifications of IRLR014TR

• Rohs Compliant: NO
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
Fig. 13a - Basic Gate Charge Waveform
5 V
AS
V
G
R
5 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-1139-Rev. C, 17-May-10
Document Number: 91321
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS