HFA200FA120P Vishay, HFA200FA120P Datasheet - Page 4

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HFA200FA120P

Manufacturer Part Number
HFA200FA120P
Description
1200V 200A HEXFRED D-67 Half-Pak
Manufacturer
Vishay
Datasheet

Specifications of HFA200FA120P

Product
Ultra Fast Recovery Rectifier
Configuration
Dual Parallel
Reverse Voltage
1200 V
Forward Voltage Drop
4.7 V at 200 A
Recovery Time
150 ns
Forward Continuous Current
100 A
Max Surge Current
900 A
Reverse Current Ir
75 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Package / Case
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HFA200FA120P
Vishay Semiconductors
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
Fig. 6 - Typical Reverse Recovery Time vs. dI
= Inverse power loss = V
300
250
200
150
100
50
1
0
0
C
If = 50A, Tj = 25°C
= T
J
- (Pd + Pd
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
dI
F
For technical questions within your region, please contact one of the following:
F(AV)
/dt (A/μs)
R1
If = 50A, Tj = 125°C
x V
REV
x I
FM
) x R
R
Vr = 200V
(1 - D); I
at (I
Ultrafast Soft Recovery Diode, 200 A
thJC
F(AV)
Fig. 8 - Typical Peak Recovery Current vs. dI
;
1
R
/D) (see fig. 5);
0
50
40
30
20
10
at V
0
0
0
1
0
F
0
R1
/dt
= Rated V
If = 50A, Tj = 125°C
HEXFRED
R
dI
If = 50A, Tj = 25°C
F
/dt (A/μs)
®
Vr = 200V
DiodesEurope@vishay.com
4000
3500
3000
2500
2000
1500
1000
500
1
Fig. 7 - Typical Stored Charge vs. dI
0
0
0
1
0
0
F
0
/dt
If = 50A, Tj = 125°C
If = 50A, Tj = 25°C
dI
F
/dt (A/μs)
Vr = 200V
Document Number: 94607
Revision: 22-Jul-10
1
0
F
0
/dt
0

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