HFA135NH40PBF Vishay, HFA135NH40PBF Datasheet - Page 2

400V 135A HEXFRED D-67 Half-Pak

HFA135NH40PBF

Manufacturer Part Number
HFA135NH40PBF
Description
400V 135A HEXFRED D-67 Half-Pak
Manufacturer
Vishay
Series
HEXFRED®r
Datasheets

Specifications of HFA135NH40PBF

Voltage - Forward (vf) (max) @ If
2V @ 270A
Current - Reverse Leakage @ Vr
3mA @ 400V
Current - Average Rectified (io) (per Diode)
275A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
120ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
D-67 HALF-PAK
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
2 V at 270 A
Recovery Time
120 ns
Forward Continuous Current
275 A
Max Surge Current
900 A
Reverse Current Ir
3000 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA135NH40PBF
Manufacturer:
Vishay Semiconductors
Quantity:
10
HFA135NH40PbF
Vishay High Power Products
www.vishay.com
2
DYNAMIC RECOVERY CHARACTERISTICS (T
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Terminal torque
Case style
maximum
maximum
minimum
minimum
SYMBOL
dI
(rec)M
I
SYMBOL
RRM
Q
t
rr
R
rr
R
For technical questions, contact: ind-modules@vishay.com
T
T
thCS
/dt
thJC
Stg
J
,
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
DC operation
See fig. 4
Mounting surface, flat, smooth and greased
HALF-PAK module
Ultrafast Soft Recovery
Diode, 275 A
HEXFRED
TEST CONDITIONS
TEST CONDITIONS
J
= 25 °C unless otherwise specified)
I
dI
V
F
R
F
= 135 A
/dt = 200 A/µs
= 200 V
®
MIN.
-
-
-
-
-
-
-
-
- 55 to 150
VALUES
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
0.27
0.05
1.06
30
TYP.
2800
280
150
350
300
7.5
77
15
Document Number: 94050
Revision: 01-Aug-08
MAX.
6300
120
440
780
14
30
-
-
(lbf · in)
UNITS
N · m
°C/W
oz.
°C
g
UNITS
A/µs
nC
ns
A

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