GB100TS60NPBF Vishay, GB100TS60NPBF Datasheet
GB100TS60NPBF
Specifications of GB100TS60NPBF
Related parts for GB100TS60NPBF
GB100TS60NPBF Summary of contents
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... ° ° ° Any terminal to case min ISOL For technical questions, contact: indmodules@vishay.com GB100TS60NPbF Vishay High Power Products CE(on) temperature coefficient CE(on) ® antiparallel diode with ultrasoft reverse DBC MAX. 600 108 74 200 200 106 69 ± 20 390 219 2500 www.vishay.com UNITS ...
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... GB100TS60NPbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SWITCHING CHARACTERISTICS (T PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss ...
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... Revision: 04-May-10 INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A SYMBOL MIN Stg IGBT - R thJC Diode - R - thCS - - - For technical questions, contact: indmodules@vishay.com GB100TS60NPbF Vishay High Power Products TYP. MAX. - 150 0.23 0.32 0.38 0.64 0 185 - 200 180 160 140 120 100 125° 25° ...
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... GB100TS60NPbF Vishay High Power Products 200 150 100 125° 25°C 0 0.0 0.5 1.0 V (V) F Fig Diode Forward Characteristics, t 160 140 120 100 Maximum DC Collector Current (A) Fig Maximum Collector Current vs. Case Temperature 1400 1200 Eoff 1000 800 600 400 200 (A) C Fig Typical Energy Loss vs 4.7 Ω ...
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... INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A 100 120 vs Fig Typical Switching Losses vs. Gate Resistance vs Fig Typical Switching Losses vs. Junction Temperature, g 1600 1800 vs. dI /dt 125 ° For technical questions, contact: indmodules@vishay.com GB100TS60NPbF Vishay High Power Products (Ω Ω 125 ° 200 μ 360 V, V ...
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... GB100TS60NPbF Vishay High Power Products 0 0.02 0. 0.01 0.001 1E-05 Fig Maximum Transient Thermal Impedance, Junction to Case (IGBT 0 0 0.01 0.01 0.001 1E-05 Fig Maximum Transient Thermal Impedance, Junction to Case (HEXFRED www.vishay.com 6 INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A Notes: 1 ...
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... Insulated Gate Bipolar Transistor (IGBT IGBT Generation 5 NPT - Current rating (100 = 100 A) - Circuit configuration (T = Half-bridge) - Package indicator (S = INT-A-PAK) - Voltage rating (60 = 600 V) - Speed/type (N = Ultrafast IGBT) - Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com GB100TS60NPbF Vishay High Power Products N PbF 7 8 www.vishay.com/doc?95173 www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...