FM600TU-2A Powerex Inc, FM600TU-2A Datasheet - Page 2

• Manufacturer Part Number: FM600TU-2A
• Description: MOSFET Power Module
• Manufacturer: Powerex Inc

Specifications of FM600TU-2A

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 mOhm @ 300A, 15V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 300A
• Vgs(th) (max) @ Id: 7.3V @ 30mA
• Gate Charge (qg) @ Vgs: 1800nC @ 15V
• Input Capacitance (ciss) @ Vds: 110000pF @ 10V
• Power - Max: 960W
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
FM600TU-2A
6-Pack High Power MOSFET Module
300 Amperes/100 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Channel Temperature
Storage Temperature
Drain-Source Voltage (G-S Short)
Gate-Source Voltage (D-E Short)
Drain Current (T C' = 133°C)
Peak Drain Current (Pulse)
Avalanche Current (L = 10µH, Pulse)
Source Current (T C = 25°C)**
Peak Source Current (Pulse)**
Maximum Power Dissipation (T C = 25°C, T j < 150°C)***
Maximum Peak Power Dissipation (T C' = 25°C, T j < 150°C)***
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Electrical Characteristics, T ch = 25°C unless otherwise specified
Characteristics
Drain-Cutoff Current
Gate-Source Threshold Voltage
Gate Leakage Current
Static Drain-Source On-State Resistance
(Chip)
Static Drain-Source On-State Voltage
(Chip)
Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switching
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Source-Drain Voltage
* Pulse width and repetition rate should be such that device channel temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).
***T C' measured point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DS(on)
V GS(th)
r DS(on)
Symbol
R lead
t d(on)
t d(off)
I GSS
I DSS
C oss
C iss
C rss
V SD
Q G
Q rr
t rr
t r
t f
I D = 300A, Terminal-Chip, T j = 125°C
Inductive Load Switching Operation,
I D = 300A, Terminal-Chip, T j = 25°C
V DD = 48V, I D = 300A, V GS = 15V
I D = 300A, V GS = 15V, T j = 125°C
I D = 300A, V GS = 15V, T j = 125°C
V GS1 = V GS2 = 15V, R G = 4.2Ω,
I D = 300A, V GS = 15V, T j = 25°C
I D = 300A, V GS = 15V, T j = 25°C
V DS = V DSS , V GS = 0V
V GS = V GSS , V DS = 0V
I D = 30mA, V DS = 10V
V DD = 48V, I D = 300A,
V DS = 10V, V GS = 0V
I S = 300A, V GS = 0V
Test Conditions
I S = 300A
I D(rms)
I S(rms)
Symbol
V DSS
V GSS
V ISO
T stg
I DM
I SM
I DA
P D
P D
—
—
—
T j
Min.
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FM600TU-2A
–40 to 150
–40 to 125
1300
2500
600*
300*
600*
100
±20
300
300
960
600
40
40
1800
0.24
0.41
Typ.
1.37
6.0
0.8
0.7
1.0
6.2
—
—
—
—
—
—
—
—
—
—
—
Max.
0.33
400
600
600
300
250
110
1.0
7.3
1.5
1.1
1.3
15
10
—
—
—
—
—
—
Amperes
Amperes
Amperes
Grams
Rev. 11/09
Watts
Watts
A rms
A rms
Units
Volts
Volts
Volts
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
mΩ
mΩ
mΩ
mΩ
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf