ES3G-E3/9AT Vishay, ES3G-E3/9AT Datasheet - Page 3

• Manufacturer Part Number: ES3G-E3/9AT
• Description: 3A,400V,35NS,UF PLASTIC RECT,SMD
• Manufacturer: Vishay

Specifications of ES3G-E3/9AT

• Voltage - Forward (vf) (max) @ If: 1.1V @ 3A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 50 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

Document Number: 88590
Revision: 20-Nov-07
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
200
160
120
0.1
0.1
10
10
80
40
Figure 4. Typical Reverse Leakage Characteristics
1
0
1
0.1
25
0
Figure 5. Reverse Switching Characteristics
Percent of Rated Peak Reverse Voltage (%)
T
0.3
J
= 125 °C
50
Instantaneous Forward Voltage (V)
20
Junction Temperature (°C)
0.5
T
75
J
T
= 150 °C
J
T
T
40
= 150 °C
J
J
0.7
= 100 °C
= 125 °C
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100
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T
J
= 25 °C
0.9
T
J
60
= 25 °C
T
125
J
at 1 A, 100 A/µs
= 100 °C
1.1
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
80
150
1.3
Q
t
rr
rr
175
100
1.5
100
3.0
2.5
2.0
1.5
1.0
0.5
10
0
1
0.1
0
Figure 7. Forward Power Loss Characteristics
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Figure 6. Typical Junction Capacitance
0.5
D = 0.1
Average Forward Current (A)
1.0
Reverse Voltage (V)
1
D = 0.2
1.5
D = 0.3
2.0
D = 0.5
ES3F & ES3G
D = t
10
T
f = 1.0 MHz
V
2.5
D = 0.8
J
p
sig
/T
= 25 °C
= 50 mVp-p
T
3.0
D = 1.0
t
p
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100
3.5
3