BZT03C18-TR Vishay, BZT03C18-TR Datasheet

Zener Diode,Single, Two Terminal,18V V(Z),6.7%,SOD-57

BZT03C18-TR

Manufacturer Part Number
BZT03C18-TR
Description
Zener Diode,Single, Two Terminal,18V V(Z),6.7%,SOD-57
Manufacturer
Vishay
Datasheet

Specifications of BZT03C18-TR

Zener Voltage Vz Typ
18V
Power Dissipation Pd
3.25W
Diode Case Style
SOD-57
No. Of Pins
2
Diode Type
Zener
Vz Test Current, Izt
25mA
Package / Case
SOD-57
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Silicon Zener-Diodes with Surge Current Specification
Features
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
T
Thermal Characteristics
T
Electrical Characteristics
T
Document Number 85599
Rev. 4, 10-Sep-03
VISHAY
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Junction ambient
Forward voltage
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
l = 10 mm, T
on PC board with spacing 25 mm
l = 10 mm, T
T
t
I
p
F
amb
L
= 100 µs, T
= 0.5 A
= constant
Test condition
= 25 °C
Test condition
Test condition
L
j
= 25 °C
= 25 °C
Symbol
V
Symbol
P
F
P
Symbol
T
P
P
ZRM
ZSM
R
R
T
stg
V
V
j
thJA
thJA
Min
- 65 to + 175
Vishay Semiconductors
BZT03..Series
Value
Value
3.25
Typ.
600
175
100
1.3
10
46
Max
1.2
949539
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
Unit
V
1

Related parts for BZT03C18-TR

BZT03C18-TR Summary of contents

Page 1

... Rev. 4, 10-Sep-03 Test condition Symbol = 25 ° ZRM = 25 ° ZSM stg Symbol R thJA R thJA Test condition Symbol V F BZT03..Series Vishay Semiconductors 949539 Value Unit 3. 600 W 175 ° 175 °C Value Unit 46 K/W 100 K/W Min Typ. Max 1.2 www.vishay.com Unit V ...

Page 2

... BZT03C110 104 110 116 BZT03C120 114 120 127 BZT03C130 124 130 141 BZT03C150 138 150 156 BZT03C160 153 160 171 BZT03C180 168 180 191 BZT03C200 188 200 212 BZT03C220 208 220 233 BZT03C240 228 240 256 BZT03C270 251 270 289 1) 10/1000 exp. falling pulse tp = 1000 µ ...

Page 3

... BZT03..Series Vishay Semiconductors Reverse Clamping Stand-off Leakage Current (CL RMS µA µ max max max 1500 4.4 9.5 34 ...

Page 4

... BZT03..Series Vishay Semiconductors Typical Characteristics ( Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, ≤100 K/W R thJA 4 l l=10mm 3 15mm T =constant L 2 20mm 1 see Fig 120 160 T – Ambient T emperature ( ° 9584 amb Figure 2. Total Power Dissipation vs. Ambient Temperature Package Dimensions in mm ...

Page 5

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Related keywords