BYVB32-200-E3/81 Vishay, BYVB32-200-E3/81 Datasheet - Page 3

• Manufacturer Part Number: BYVB32-200-E3/81
• Description: 18A,200V,25NS,DUAL UF RECT
• Manufacturer: Vishay

Specifications of BYVB32-200-E3/81

• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 18A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V at 20 A
• Recovery Time: 25 ns
• Forward Continuous Current: 18 A
• Max Surge Current: 150 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88558
Revision: 07-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
150
125
100
0.01
100
20
18
16
75
50
25
12
0.1
10
0
0
8
4
1
0.1
1
0
Figure 1. Forward Current Derating Curve
25
0.3
Instantaneous Forward Voltage (V)
Case Ambient Temperature (°C)
Number of Cycles at 50 Hz
Current Per Diode
50
0.5
T
J
= 125 °C
T
10 ms Single Half Sine-Wave
Resistive or Inductive Load
J
10
75
0.7
= 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
100
= 25 °C
0.9
125
1.1
100
150
1.3
BYV(F,B)32-50 thru BYV(F,B)32-200
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
100
0.1
60
50
40
30
20
10
10
0
Figure 5. Typical Junction Capacitance Per Diode
1
1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
C
Reverse Voltage (V)
= 100 °C
T
C
40
= 25 °C
10
60
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 5 mVp-p
80
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100
100
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