BAS86-GS18 Vishay, BAS86-GS18 Datasheet - Page 2

• Manufacturer Part Number: BAS86-GS18
• Description: Schottky Rectifier
• Manufacturer: Vishay

Specifications of BAS86-GS18

• Current Rating: 200mA
• Mounting Type: Surface Mount
• Package / Case: SOD-80C
• Capacitance: 8pF
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 0.2 A
• Configuration: Single
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.9 V at 0.1 A
• Maximum Reverse Leakage Current: 5 uA at 40 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAS86
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
amb
amb
Figure 2. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
15827
15828
10000
Figure 1. Max. Reverse Power Dissipation vs.
1000
Parameter
500
450
400
350
300
250
200
150
100
100
50
10
0
1
25
25
R
thJA
V
V
R
R
T
= 540 K/W
= 50 V
Junction Temperature
j
= V
50
T
50
- Junction Temperature (°C)
j
- Junction Temperature (°C)
RRM
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For technical questions within your region, please contact one of the following:
75
75
at 100 % V
P
R
- Limit
100
100
I
F
Pulse test t
Pulse test t
Pulse test t
Pulse test t
Pulse test t
I
I
I
I
F
I
V
F
= 10 mA, I
I
F
F
R
F
R
R
= 100 mA, δ < 2 %
= 0.1 mA, δ < 2 %
= 10 mA, δ < 2 %
= 30 mA, δ < 2 %
= 10 µA (pulsed)
Test condition
= 1 mA, δ < 2 %
= 1 V, f = 1 MHz
125
125
I
V
at 80 % V
P
rr
R
R
= 1 mA,
- Limit
= 40 V
p
p
p
p
p
R
< 300 µs,
< 300 µs,
< 300 µs,
< 300 µs,
< 300 µs,
150
150
R
= 10 mA,
Symbol
V
C
V
V
V
V
V
(BR)
I
t
R
rr
F
F
F
F
F
D
15830
Figure 4. Diode Capacitance vs. Reverse Voltage
15829
Figure 3. Forward Current vs. Forward Voltage
1000
100
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
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0
0.1
Min.
50
T
V
V
j
F
R
= 125 °C
- Forward Voltage (V)
0.5
- Reverse Voltage (V)
1
Typ.
200
275
365
460
700
T
j
= 25 °C
1.0
Document Number 85511
10
f = 1 MHz
Max.
300
380
450
600
900
5
8
5
Rev. 1.8, 13-Jan-11
100
1.5
Unit
mV
mV
mV
mV
mV
µA
pF
ns
V